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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA. Complementary to KTA511T. A F G 1 2 KTC611T EPITAXIAL PLANAR NPN TRANSISTOR E B 5 DIM MILLIMETERS _ A 2.9 + 0.2 B C D E F G H I J K L 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 3 4 G MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC * Tj Tstg 0.8 ) RATING 35 30 5 500 -500 0.9 150 -55 150 UNIT V V V mA mA W C L J J H 1. Q 1 BASE 2. Q 1, Q 2 EMITTER 3. Q 2 BASE 4. Q 2 COLLECTOR 5. Q 1 COLLECTOR TSV * Package mounted on a ceramic board (600 EQUIVALENT CIRCUIT(TOP VIEW) 5 4 D Q1 1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification hFE(2) Classification 0:70 140, 0:25Min., Y:120 ) TEST CONDITION VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=6V, IC=400mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=6V, IC=20mA VCB=6V, IE=0, f=1MHz MIN. 70 25 TYP. 0.1 0.8 300 7.0 MAX. 0.1 0.1 240 0.25 1.0 V V MHz pF UNIT A A ICBO IEBO SYMBOL hFE(1) (Note) hFE(2) (Note) VCE(sat) VBE fT Cob 240 Y:40Min. Marking h FE Rank Type Name 5 4 L 1 2 3 2002. 1. 24 Revision No : 1 I Q2 2 3 Lot No. 1/2 KTC611T I C - VCE 500 COLLECTOR CURRENT I C (mA) 400 300 200 100 0 COMMON EMITTER Ta=25 C 6.0 4.0 3.0 2.0 h FE - I C 500 DC CURRENT GAIN h FE 300 Ta=100 C VCE =6V 100 50 30 Ta=-25 C Ta=25 C VCE =1V COMMON EMITTER 1.0 0.5 I B =0.1mA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 0.5 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) I B - VBE COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 2k 1k BASE CURRENT I B (A) 500 300 C C Ta= 25 00 C VCE(sat) - I C 1 0.5 0.3 COMMON EMITTER I C /I B =10 COMMON EMITTER VCE =6V Ta= 1 50 30 10 5 0 0.2 0.4 Ta= 100 -25 0.1 0.05 0.03 Ta=100 C Ta=25 C Ta=-25 C 0.6 0.8 1.0 0.01 0.5 1 3 10 30 100 300 1K BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA) Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 1.2 MOUNTED ON A 1.0 0.8 0.6 0.4 0.2 0 CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2002. 1. 24 Revision No : 1 2/2 |
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